A deeper look at GaN for power - ElectronicsWeekly.com
27 May 2012, 7:15 pm
However, Briere argues that Schottky gates are far too leaky in the widths required, which is why IR uses an insulated gate. Also, because the device is lateral, die tend to be laid out with source fingers approaching from one side, and drain fingers from the other.

Revenue of power mgmt semiconductor devices to reach $8.0 B in the 2Q, up 6.7% - eeherald.com
27 May 2012, 11:30 am
The leading power management products in the consumer space will be insulated gate bipolar transistor (IGBT) modules, used as a device to switch electric power in many modern appliances. In the consumer segment, power management integrated circuits will be ...

Power management chip market rebounds - Components in Electronics
24 May 2012, 4:20 pm
The leading power management products in the consumer space will be insulated gate bipolar transistor (IGBT) modules, used as a device to switch electric power in many modern appliances. In the consumer segment, power management integrated circuits will be ...

Power management semiconductors grow after a rocky Q4 2011 - ElectroIQ
24 May 2012, 2:18 pm
Look for insulated gate bipolar transistor (IGBT) modules (industrial) and power management integrated circuits (consumer) to drive growth. Also read: Metal deposition in power semiconductors Projections for the next 5 years show overall positive growth ...

BUYINS.NET: UQM, IXYS Expected To Be Down After Next Earnings Releases - TMCnet
23 May 2012, 8:00 am
The company offers power metal oxide silicon field effect transistors; insulated gate bipolar transistors; and thyristors and rectifiers, including fast recovery epitaxial diodes. These power semiconductors are used primarily in controlling ...

Insulated Gate Bipolar Transistors feature 1,200 V rating. - ThomasNet Industrial News Room
22 May 2012, 7:25 am
May 22, 2012 - Models APT40GR120B, APT40GR120S, and APT40GR120B2D30 minimize switching and conduction losses. Discrete non-punch through IGBTs are offered on standalone basis or can be packaged in combination with Microsemi's FRED or silicon carbide ...

ABB to expand its manufacturing unit for semiconductors - CIOL Network
21 May 2012, 5:46 am
ABB will invest $50 million to add production equipment to increase manufacturing capacity for high-voltage IGBT (insulated gate bipolar transistor) devices and modules. An IGBT is a power semiconductor device used for high efficiency and fast switching of ...

Field Stop IGBTs suit inductive heating applications. - ThomasNet Industrial News Room
18 May 2012, 7:23 am
today introduced a new series of Field Stop Insulated Gate Bipolar Transistors (IGBTs) targeted at industrial motor control and consumer products. The NGTB15N120, NGTB20N120 and NGTB25N120 enable high performance power conversion solutions for a wide range ...

Dynex Power Announces First Quarter Results for 2012 - CNW Group
16 May 2012, 5:12 pm
About the Company Dynex designs and manufactures high power bipolar semiconductors, high power insulated gate bipolar transistor (IGBT) modules, high power electronic assemblies and radiation hard silicon-on-sapphire integrated circuits (SOS IC's).

ON Semiconductor Introduces High Performance Field Stop IGBTs for High Efficiency Power Conversion - TMCnet
8 May 2012, 4:29 am
Power Conversion Intelligent Motion (PCIM) - ON Semiconductor (Nasdaq: ONNN), a premier supplier of high performance silicon solutions for energy efficient electronics, today introduced a new series of Field Stop Insulated Gate Bipolar ...